Structure: InGaAs PIN for waveguide 1310/1550nm. P-electrode(anode with Gold), N-electrode(cathode with Gold).
Dimension:．L:400±20um．W:250±20um．H:150±20um．Active area:50 um. 
Feature: BW 10GHz(min.)/ BV=30V/low capacitance/low dark current/low Vf/high responsivity/high reliability/ low noise/With RoHS and Halogen Free compliance.
Basic application: The GaAs PIN photodiode is widely used to the optical communication such as receiver or transceiver compact, with rugged construction, low power consumption, adapt to Transistor Outline Can package，like series of TO-4x, or TO-5x.